Revision as of 21:34, 23 April 2016

Semiconductor lithography processes technology

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The 14 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 16 nm and 10 nm processes. As is the case with all recent process nodes, while the term "14 nm" is used by a number of companies, the exact feature sizes various wildly from one manufacturer to another. Commercial integrated circuit manufacturing using 14 nm process began in 2014. This technology is set to be replaced with 10 nm process in 2017.

Industry

Intel

• 2nd generation finFET transistors
• They are now much more vertical and slimmer, down to 8 nm width.
• TiN pMOS / TiAlN nMOS
• ~22 nm minimum gate length

	Measurement	Scaling from 22 nm
Fin Pitch	42 nm	0.70x
Contacted Gate Pitch	70 nm	0.78x
Interconnect Pitch (M1P)	52 nm	0.65x
SRAM bit cell	0.0588 µm2	0.54x

Global Foundries / Samsung

• 1st generation finFET transistors
• 2nd generation RMG process
• TiN pMOS WF material / TiAIC nMOS WF material
• Fin height of ~38 nm, width ~8 nm
• ~27 nm minimum gate length

14 nm Microprocessors

• Intel
  • Core i7EE

This list is incomplete; you can help by expanding it.

14 nm System on Chips

• Intel
  • Atom x5
  • Atom x7
  • Xeon D

This list is incomplete; you can help by expanding it.

14 nm Microarchitectures

• Intel
  • Airmont
  • Goldmont
  • Broadwell
  • Skylake

This list is incomplete; you can help by expanding it.