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Difference between revisions of "14 nm lithography process"

(14 nm Microprocessors)
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{{lithography processes}}
 
{{lithography processes}}
The '''14 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[16 nm lithography process|16 nm]] and [[10 nm lithography process|10 nm]] processes. Commercial [[integrated circuit]] manufacturing using 14 nm process began in 2014. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in late 2016 or 2017.
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The '''14 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[16 nm lithography process|16 nm]] and [[10 nm lithography process|10 nm]] processes. As is the case with all recent process nodes, while the term "14 nm" is used by a number of companies, the exact feature sizes various wildly from one manufacturer to another. Commercial [[integrated circuit]] manufacturing using 14 nm process began in 2014. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in 2017.
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== Industry ==
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=== Intel ===
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Intel continues with its 2nd generation trigate transistors. A change from [[22 nm]] in Intel's process is that the fins have been significantly modified. They are now much more vertical and slimmer, down to 8 nm width. Low-k dielectrics is used in the first eight levels.
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{| class="wikitable"
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|-
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| || Measurement || Scaling from [[22 nm]] || rowspan="5" | [[File:intel 14nm gate.png|215px]]
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|-
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| Fin Pitch || 42 nm || 0.70x
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|-
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| Contacted Gate Pitch || 70 nm || 0.78x
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|-
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| Interconnect Pitch (M1P) || 52 nm || 0.65x
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|-
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| [[SRAM]] bit cell || 0.0588 µm<sup>2</sup> || 0.54x
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|}
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=== Global Foundries / Samsung ===
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{| class="wikitable"
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|-
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| || Measurement || Notes
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|-
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| Fin Pitch || 48 nm ||
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|-
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| Contacted Gate Pitch || 78 nm ||
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|-
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| Interconnect Pitch (M1P) || 64 nm ||
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|-
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| [[SRAM]] bit cell || 0.08 µm<sup>2</sup> || High Performance
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|-
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| [[SRAM]] bit cell || 0.064 µm<sup>2</sup> || High Density
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|}
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{{clear|left}}
 
== 14 nm Microprocessors==
 
== 14 nm Microprocessors==
 
* Intel
 
* Intel
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** {{intel|Goldmont}}
 
** {{intel|Goldmont}}
 
** {{intel|Broadwell}}
 
** {{intel|Broadwell}}
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** {{intel|Skylake}}
  
 
{{expand list}}
 
{{expand list}}
 
[[Category:Lithography]]
 
[[Category:Lithography]]

Revision as of 17:34, 23 April 2016

The 14 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 16 nm and 10 nm processes. As is the case with all recent process nodes, while the term "14 nm" is used by a number of companies, the exact feature sizes various wildly from one manufacturer to another. Commercial integrated circuit manufacturing using 14 nm process began in 2014. This technology is set to be replaced with 10 nm process in 2017.

Industry

Intel

Intel continues with its 2nd generation trigate transistors. A change from 22 nm in Intel's process is that the fins have been significantly modified. They are now much more vertical and slimmer, down to 8 nm width. Low-k dielectrics is used in the first eight levels.

Measurement Scaling from 22 nm intel 14nm gate.png
Fin Pitch 42 nm 0.70x
Contacted Gate Pitch 70 nm 0.78x
Interconnect Pitch (M1P) 52 nm 0.65x
SRAM bit cell 0.0588 µm2 0.54x

Global Foundries / Samsung

Measurement Notes
Fin Pitch 48 nm
Contacted Gate Pitch 78 nm
Interconnect Pitch (M1P) 64 nm
SRAM bit cell 0.08 µm2 High Performance
SRAM bit cell 0.064 µm2 High Density

14 nm Microprocessors

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14 nm System on Chips

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14 nm Microarchitectures

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