90 nm lithography process

Semiconductor lithography processes technology

The 90 nanometer (90 nm) lithography process is a full node semiconductor manufacturing process following the 110 nm process stopgap.

Commercial integrated circuit manufacturing using 90 nm process began in 2003.

This technology was superseded by the 80 nm (HN) / 65 nm process (FN) in 2006.

Industry[edit]

Introduced in late 2002, Intel's 90 nm process became the first volume production to introduce strained silicon transistors.

Intel		TSMC		Samsung		Fujitsu		IBM / Toshiba / Sony / AMD		Motorola		TI
P1262						CS-100 / CS-101				HiPerMOS 8
2002		2003		2003		2004		2003		2004		2005
Bulk								PDSOI				Bulk
300mm
7						10						9
Value	130 nm Δ	Value	130 nm Δ	Value	130 nm Δ	Value	130 nm Δ	Value	130 nm Δ	Value	130 nm Δ	Value	130 nm Δ
260 nm	0.82x	240 nm	0.77x	245 nm	0.70x	? nm	?x	? nm	?x	? nm	?x	? nm	?x .
220 nm	0.63x	240 nm	0.71x	245 nm	0.70x	? nm	?x	? nm	?x	? nm	?x	? nm	?x .
1.0 µm²	0.50x	0.999 µm²	0.47x	0.999 µm²	?x	1.07 µm²	0.54x	0.999 µm²	?x	? µm²	?x	? µm²	?x
				0.275 µm²				0.19 µm²	?x

This list is incomplete; you can help by expanding it.

This list is incomplete; you can help by expanding it.