HP's NMOS II was a second generation nMOD process which was a shrink of their previous generation 7 µm nMOS also developed by HP's Loveland Division. The shrink was done in the hope they could double the speed while doubling density. Loveland went on on to create a third and final process, the NMOS III using a 1.5 µm process. While they succeeded in doubling the density and more than ten-folding the speed, the complexity of the chip still required them to fabricate it on 3 separate dies and package them together. Intel introduced their 2116 in 1976, the first 16 Kib DRAM which was also implemented using 5 micron design rules.
|Gate Length (Lg)|
|Contacted Gate Pitch (CPP)|
|Minimum Metal Pitch (MMP)|
|SRAM bitcell||High-Perf (HP)|
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