From WikiChip
Difference between revisions of "16 nm lithography process"

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== Industry ==
 
== Industry ==
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{{scrolling table/top|style=text-align: right; | first=Fab
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=== TSMC ===
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| 
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{| class="wikitable"
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|Fin Pitch
 +
|Fin Width
 +
|Fin Height
 +
|Contacted Gate Pitch
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|Interconnect Pitch (M1P)
 +
|SRAM bit cell
 +
}}
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{{scrolling table/mid}}
 
|-
 
|-
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| || Measurement
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! colspan="2" | [[TSMC]]
 
|-
 
|-
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| Fin Pitch || 48 nm
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! Value !! [[20 nm]] Δ
 
|-
 
|-
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| Contacted Gate Pitch || 90 nm
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| 48 nm || rowspan="3" | N/A
 
|-
 
|-
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| Interconnect Pitch (M1P) || 64 nm
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| ? nm
 
|-
 
|-
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| [[SRAM]] bit cell || 0.07 µm<sup>2</sup>
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| ? nm
−
|}
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|-
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| 90 nm || 1.03x
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|-
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| 64 nm || 1.00x
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|-
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| 0.07 µm<sup>2</sup> || 0.55x
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{{scrolling table/end}}
  
 
== 16 nm Microprocessors==
 
== 16 nm Microprocessors==

Revision as of 05:53, 24 April 2016

basic wafer drawing.svg Semiconductor lithography processes technology
v · d · e

The 16 nm lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. This technology is set to replaced by 14 nm process (HN) (2014) and 10 nm process (FN) in 2017.

Industry

Fab
 ​
Fin Pitch​
Fin Width​
Fin Height​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
TSMC
Value 20 nm Δ
48 nm N/A
 ? nm
 ? nm
90 nm 1.03x
64 nm 1.00x
0.07 µm2 0.55x

16 nm Microprocessors

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16 nm System on Chips

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16 nm Microarchitectures

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