Revision as of 19:11, 24 April 2016

Semiconductor lithography processes technology

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The 14 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 16 nm and 10 nm processes. As is the case with all recent process nodes, while the term "14 nm" is used by a number of companies, the exact feature sizes various wildly from one manufacturer to another. Commercial integrated circuit manufacturing using 14 nm process began in 2014. This technology is set to be replaced with 10 nm process in 2017.

Industry

14 nm became Intel's 2nd generation finFET transistors. This process became Samsungs' and GlobalFoundries first generation of finFet-based transistors. Intel uses TiN pMOS / TiAlN nMOS while Samsung uses TiN pMOS / TiAIC nMOS as work function metals.

Design Rules

14 nm Microprocessors

• Intel
  • Core i7EE

This list is incomplete; you can help by expanding it.

14 nm System on Chips

• Intel
  • Atom x5
  • Atom x7
  • Xeon D

This list is incomplete; you can help by expanding it.

14 nm Microarchitectures

• Intel
  • Airmont
  • Goldmont
  • Broadwell
  • Skylake

Documents

• A 14nm logic technology featuring 2 nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm 2 SRAM cell size, 15-17 Dec. 2014; 10.1109/IEDM.2014.7046976

This list is incomplete; you can help by expanding it.