The 150 nanometer (150 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 180 nm and 130 nm processes. Commercial integrated circuit manufacturing using 150 nm process began in early 2000s. This technology superseded by commercial 130 nm, 110 nm, and 90 nm processes.

Industry

On December 16, 1999, Samsung announced the development of a $1.8B Line 10, a 1M meter² site in Hwasung-gun, Kyonggi Province. Line 10 was dedicated for the production of 128 MiB, 256 MiB and Rambus DRAMs on a 150 nm process. Line 10 opened in the third quarter of 2000 producing 16,000 200 mm wafers per month going into full capacity in the in the first quarter of 2001 producing 32,000 wafers a month.

Fab
Process Name​
1st Production​
Metal Layers​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell

TSMC		Fujitsu		Samsung
		CS-85
2000		2002		2002
		6
Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ
? nm	?x	? nm	?x	? nm	?x
? nm	?x	? nm	?x	? nm	?x
3.42 µm2	0.74x	? µm2	?x	? µm2	?x

150 nm Microprocessors

• Cyrix
  • Cyrix III
• HAL (Fujitsu)
  • SPARC64 GP

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150 nm microarchitectures

• VIA Technologies
  • Samuel 2