The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

Process Name
1st Production
Lithography	Lithography
	Immersion
	Exposure
Wafer	Type
	Size
Transistor	Type
	Voltage
Metal Layers
Gate Length (Lg)
Contacted Gate Pitch (CPP)
Minimum Metal Pitch (MMP)
SRAM bitcell	High-Perf (HP)
	High-Density (HD)
	Low-Voltage (LV)
DRAM bitcell	eDRAM

TSMC		Common Platform Alliance The 'Common Platform Alliance is a joint collaboration between IBM, Samsung, GlobalFoundries, Toshiba, NEC, STMicroelectronics, Infineon Technologies, Chartered Semiconductor Manufacturing
		28LP/28LPP/28SLP
		2
Bulk		Bulk
300 mm		300 mm
Planar		Planar
		1 V
10
Value	32 nm Δ	Value	32 nm Δ
		113.4 nm
		90 nm
		0.152 µm²
		0.120 µm²
		0.197 µm²

28 nm Microprocessors

• AMD
  • A8
  • A10
• Intel (Fab'ed by TSMC)
  • Atom x3
• MediaTek
  • Helio
• Phytium
  • FT-1500A
• PEZY
  • PEZY-SC
  • PEZY-SCnp
• Xiaomi
  • Surge

This list is incomplete; you can help by expanding it.

28 nm Microarchitectures

• AMD
  • Steamroller
  • Excavator
• ARM Holdings
  • Cortex-A53
• Phytium
  • Xiaomi

This list is incomplete; you can help by expanding it.

References

• Wu, Shien-Yang, et al. "A highly manufacturable 28nm cmos low power platform technology with fully functional 64mb sram using dual/tripe gate oxide process." VLSI Technology, 2009 Symposium on. IEEE, 2009.
• Shang, Huiling, et al. "High performance bulk planar 20nm CMOS technology for low power mobile applications." VLSI Technology (VLSIT), 2012 Symposium on. IEEE, 2012.
• James, Dick. "High-k/metal gates in the 2010s." Advanced Semiconductor Manufacturing Conference (ASMC), 2014 25th Annual SEMI. IEEE, 2014.
• Samsung foundry solution for 32 & 28 nm