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28 nm lithography process
Revision as of 21:33, 25 April 2016 by Inject (talk | contribs) (Industry)

The 28 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

Fab
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HD)​
SRAM bit cell (LP)
Samsung TSMC GlobalFoundries
Value 40 nm Δ Value 40 nm Δ Value 40 nm Δ
90 nm 0.70x 117 nm 0.72x  ?nm  ?x
96 nm 0.82x  ?nm  ?x  ?nm  ?x
0.120 µm2  ?x 0.127 µm2 0.52x 0.120 µm2  ?x
0.155 µm2

28 nm Microprocessors

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28 nm System on Chips

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