The 130 nm lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.

Industry

Fab
Process Name​
1st Production​
Type​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell

Intel		TSMC		Samsung		Fujitsu		IBM
P860						CS-91
2001		2001		2001		2002		2001
Bulk								PDSOI
Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ
319 nm	0.66x	310 nm	?x	350 nm	?x	? nm	?x	350 nm	?x
345 nm	0.69x	340 nm	?x	350 nm	?x	? nm	?x	? nm	?x
2.0 µm2	0.36x	2.14 µm2	0.46x	? µm2	?x	1.98 µm2	0.47x	1.8 µm2	?x

Design Rules

Intel 130nm Design Rules
Layer	Pitch	Thick	Aspect Ratio
Isolation	345 nm	450 nm	-
Polysilicon	319 nm	160 nm	-
Metal 1	293 nm	280 nm	1.7
Metal 2	425 nm	360 nm	1.7
Metal 3	425 nm	360 nm	1.7
Metal 4	718 nm	570 nm	1.6
Metal 5	1.064 µm	900 nm	1.7
Metal 6	1.143 µm	1.2 µm	2.1

130 nm Microprocessors

• Intel
  • Pentium III
  • Pentium III-M
  • Pentium 4 Extreme Edition

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130 nm Microarchitectures

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