The 14 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 16 nm and 10 nm processes. As is the case with all recent process nodes, while the term "14 nm" is used by a number of companies, the exact feature sizes various wildly from one manufacturer to another. Commercial integrated circuit manufacturing using 14 nm process began in 2014. This technology is set to be replaced with 10 nm process in 2017.

Industry

14 nm became Intel's 2nd generation finFET transistors. This process became Samsungs' and GlobalFoundries first generation of finFet-based transistors. Intel uses TiN pMOS / TiAlN nMOS while Samsung uses TiN pMOS / TiAIC nMOS as work function metals.

Fab
​
Fin Pitch​
Fin Width​
Fin Height​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HP)​
SRAM bit cell (HD)

Intel		Samsung		GlobalFoundries
Value	22 nm Δ	Value	20 nm Δ	Value	20 nm Δ
42 nm	0.70x	48 nm	-	48 nm	-
8 nm	1.00x	8 nm	-	8 nm	-
42 nm	1.24x	~38 nm	-	~38 nm
70 nm	0.78x	78 nm	1.22x	78 nm	1.22x
52 nm	0.65x	64 nm	1.00x	64 nm	1.00x
0.0588 µm2	0.54x	0.08 µm2	?x	0.08 µm2	?x
		0.064 µm2	?x	0.064 µm2	?x

14 nm Microprocessors

• Intel
  • Core i7EE

This list is incomplete; you can help by expanding it.

14 nm System on Chips

• Intel
  • Atom x5
  • Atom x7
  • Xeon D

This list is incomplete; you can help by expanding it.

14 nm Microarchitectures

• Intel
  • Airmont
  • Goldmont
  • Broadwell
  • Skylake

This list is incomplete; you can help by expanding it.