The 40 nanometer (40 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 45 nm and 32 nm processes. Commercial integrated circuit manufacturing using 40 nm process began in 2008 by leading semiconductor companies such as TSMC. This technology superseded by commercial 32 nm process by 2010.

Industry

Fab
Wafer​
Metal Layers​
1st Production​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell

TSMC		Samsung		Toshiba / NEC		Crolles2 Alliance
300mm
9
4Q 2008
Value	65 nm Δ	Value	65 nm Δ	Value	65 nm Δ	Value	65 nm Δ
162 nm	1.01x	129 nm	0.65x	168 nm	0.67x	140 nm	?x
120 nm	0.67x	117 nm	0.65x	? nm	?x	? nm	?x
0.242 µm2	0.46x	? µm2	?x	0.195 µm2	0.33x	0.250 µm2	?x

40 nm Microprocessors

• HiSilicon
  • K3
• PEZY
  • PEZY-1
• Renesas
  • R-Car
• STMicroelectronics
  • STM32 H7
  • STM32 U5

This list is incomplete; you can help by expanding it.