The 14 nanometer (14 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 16 nm and 10 nm processes. The term "14 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial integrated circuit manufacturing using 14 nm process began in 2014. This technology is set to be replaced with 10 nm process in 2017.

Industry

14 nm became Intel's 2nd generation finFET transistors. This process became Samsungs' and GlobalFoundries first generation of finFet-based transistors. Intel uses TiN pMOS / TiAlN nMOS while Samsung uses TiN pMOS / TiAIC nMOS as work function metals.

Fab
Process Name​
1st Production​
Type​
Wafer​
​
Fin Pitch​
Fin Width​
Fin Height​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HP)​
SRAM bit cell (HD)​
DRAM bit cell

Intel		Samsung		GlobalFoundries		IBM
P1272
2014		2015		2015		2015
Bulk FinFET						SOI FinFET
300mm
Value	22 nm Δ	Value	20 nm Δ	Value	20 nm Δ	Value	22 nm Δ
42 nm	0.70x	48 nm	N/A	48 nm	N/A	42 nm	N/A
8 nm	1.00x	8 nm		8 nm		10 nm
42 nm	1.24x	~38 nm		~38 nm		25 nm
70 nm	0.78x	78 nm	1.22x	78 nm	1.22x	80 nm	0.80x
52 nm	0.65x	64 nm	1.00x	64 nm	1.00x	64 nm	0.80x
0.0588 µm2	0.54x	0.080 µm2	?x	0.080 µm2	?x	0.900 µm2
		0.064 µm2	?x	0.064 µm2	?x	0.081 µm2	0.81x
						0.0174 µm2	0.67x

Design Rules

Intel 14nm Design Rules
Layer	Pitch	Scale Factor
Fin	42 nm	0.70
Contacted Gate Pitch	70 nm	0.78
Metal 0	56	-
Metal 1	70	0.78
Metal 2	52	0.65

14 nm Microprocessors

• Intel
  • Core i3
  • Core i5
  • Core i7
  • Core i7EE
  • Xeon
  • Xeon E3
  • Xeon E5
  • Xeon E7

This list is incomplete; you can help by expanding it.

Click to browse all 14 nm MPU models

14 nm System on Chips

• Intel
  • Atom x5
  • Atom x7
  • Xeon D

This list is incomplete; you can help by expanding it.

14 nm Microarchitectures

• Intel
  • Airmont
  • Goldmont
  • Broadwell
  • Skylake

This list is incomplete; you can help by expanding it.

Documents

• A 14nm logic technology featuring 2 nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm 2 SRAM cell size, 15-17 Dec. 2014; 10.1109/IEDM.2014.7046976