The 350 nm lithography process is a full node semiconductor manufacturing process following the 500 nm process node. Commercial integrated circuit manufacturing using 350 nm process began in late 1995. 350 nm was phased out and replaced by 250 nm in 1999.

Industry

Fab
Type​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell

Intel
Value
? nm
880 nm
18.1 µm2

Design Rules

Intel 0.350 micron Design Rules
Layer	Pitch	Thick
Isolation	? nm	? nm
Polysilicon	? nm	? nm
Metal 1	880 nm	600 nm
Metal 2	1.16 µm	800 nm
Metal 3	1.16 µm	800 nm
Metal 4	1.70 µm	1.70 µm

350 nm Microprocessors

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350 nm Microarchitectures

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