The 350 nm lithography process is a full node semiconductor manufacturing process following the 500 nm process node. Commercial integrated circuit manufacturing using 350 nm process began in late 1995. 350 nm was phased out and replaced by 250 nm in 1999.

Industry

Fab
Process Name​
1st Production​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell

Intel	IBM
P854
1994	1994
Value	Value
550 nm	? nm
880 nm	? nm
18.1 µm2	? µm2

Design Rules

Intel 0.350 micron Design Rules
Layer	Pitch	Thick
Isolation	? nm	? nm
Polysilicon	? nm	? nm
Metal 1	880 nm	600 nm
Metal 2	1.16 µm	800 nm
Metal 3	1.16 µm	800 nm
Metal 4	1.70 µm	1.70 µm

350 nm Microprocessors

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350 nm Microarchitectures

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