Semiconductor & Computer Engineering
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Difference between revisions of "40 nm lithography process"
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Revision as of 20:55, 21 July 2017
Semiconductor lithography processes technology
The 40 nanometer (40 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 45 nm and 32 nm processes. Commercial integrated circuit manufacturing using 40 nm process began in 2008 by leading semiconductor companies such as TSMC. This technology superseded by commercial 32 nm process by 2010.
Industry
| Fab |
|---|
| Wafer |
| Metal Layers |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| TSMC | Samsung | Toshiba / NEC | Crolles2 Alliance | ||||
|---|---|---|---|---|---|---|---|
| 300mm | |||||||
| 9 | |||||||
| Value | 65 nm Δ | Value | 65 nm Δ | Value | 65 nm Δ | Value | 65 nm Δ |
| 162 nm | 1.01x | 129 nm | 0.65x | 168 nm | 0.67x | 140 nm | ?x |
| 120 nm | 0.67x | 117 nm | 0.65x | ? nm | ?x | ? nm | ?x |
| 0.242 µm2 | 0.46x | ? µm2 | ?x | 0.195 µm2 | 0.33x | 0.250 µm2 | ?x |
40 nm Microprocessors
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