Semiconductor & Computer Engineering
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Difference between revisions of "130 nm lithography process"
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| − | ! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[IBM]] | + | ! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[IBM]] / [[Infineon]] / [[UMC]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
| − | | colspan="2" | P860 || colspan="2" | || colspan="2" | || colspan="2" | CS-91 || colspan="2" | | + | | colspan="2" | P860 || colspan="2" | || colspan="2" | || colspan="2" | CS-91 || colspan="2" | CMOS 9S |
|- style="text-align: center;" | |- style="text-align: center;" | ||
| colspan="2" | 2001 || colspan="2" | 2001 || colspan="2" | 2001 || colspan="2" | 2002 || colspan="2" | 2001 | | colspan="2" | 2001 || colspan="2" | 2001 || colspan="2" | 2001 || colspan="2" | 2002 || colspan="2" | 2001 | ||
| Line 26: | Line 26: | ||
| 319 nm || 0.66x || 310 nm || ?x || 350 nm || ?x || ? nm || ?x || 350 nm || ?x | | 319 nm || 0.66x || 310 nm || ?x || 350 nm || ?x || ? nm || ?x || 350 nm || ?x | ||
|- | |- | ||
| − | | 345 nm || 0.69x || 340 nm || ?x || 350 nm || ?x || ? nm || ?x || | + | | 345 nm || 0.69x || 340 nm || ?x || 350 nm || ?x || ? nm || ?x || 320 nm || ?x |
|- | |- | ||
| 2.0 µm<sup>2</sup> || 0.36x || 2.14 µm<sup>2</sup> || 0.46x || ? µm<sup>2</sup> || ?x || 1.98 µm<sup>2</sup> || 0.47x || 1.8 µm<sup>2</sup> || ?x | | 2.0 µm<sup>2</sup> || 0.36x || 2.14 µm<sup>2</sup> || 0.46x || ? µm<sup>2</sup> || ?x || 1.98 µm<sup>2</sup> || 0.47x || 1.8 µm<sup>2</sup> || ?x | ||
Revision as of 23:10, 25 April 2016
Semiconductor lithography processes technology
The 130 nm lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.
Industry
| Fab |
|---|
| Process Name |
| 1st Production |
| Type |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel | TSMC | Samsung | Fujitsu | IBM / Infineon / UMC | |||||
|---|---|---|---|---|---|---|---|---|---|
| P860 | CS-91 | CMOS 9S | |||||||
| 2001 | 2001 | 2001 | 2002 | 2001 | |||||
| Bulk | PDSOI | ||||||||
| Value | 180 nm Δ | Value | 180 nm Δ | Value | 180 nm Δ | Value | 180 nm Δ | Value | 180 nm Δ |
| 319 nm | 0.66x | 310 nm | ?x | 350 nm | ?x | ? nm | ?x | 350 nm | ?x |
| 345 nm | 0.69x | 340 nm | ?x | 350 nm | ?x | ? nm | ?x | 320 nm | ?x |
| 2.0 µm2 | 0.36x | 2.14 µm2 | 0.46x | ? µm2 | ?x | 1.98 µm2 | 0.47x | 1.8 µm2 | ?x |
Design Rules
| Intel 130nm Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 345 nm | 450 nm | - |
| Polysilicon | 319 nm | 160 nm | - |
| Metal 1 | 293 nm | 280 nm | 1.7 |
| Metal 2 | 425 nm | 360 nm | 1.7 |
| Metal 3 | 425 nm | 360 nm | 1.7 |
| Metal 4 | 718 nm | 570 nm | 1.6 |
| Metal 5 | 1.064 µm | 900 nm | 1.7 |
| Metal 6 | 1.143 µm | 1.2 µm | 2.1 |
130 nm Microprocessors
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130 nm Microarchitectures
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