Difference between revisions of "28 nm lithography process"

Revision as of 21:43, 25 April 2016

Semiconductor lithography processes technology

1 nm • 18A
2 nm • 3 nm
5 nm • 7 nm
10 nm • 12 nm
14 nm • 16 nm
20 nm • 22 nm
28 nm • 32 nm
40 nm • 45 nm
55 nm • 65 nm
80 nm • 90 nm
110 nm • 130 nm
150 nm • 180 nm
220 nm • 240 nm
250 nm • 280 nm
350 nm • 500 nm
600 nm • 650 nm
700 nm • 750 nm
800 nm
1 µm • 1.2 µm
1.3 µm • 1.5 µm
2 µm • 2.5 µm
3 µm • 3.5 µm
5 µm • 6 µm
7 µm • 8 µm
10 µm • 16 µm
20 µm • 50 µm

The 28 nm lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.

Industry

Fab

Contacted Gate Pitch
Interconnect Pitch (M1P)
SRAM bit cell (HD)
SRAM bit cell (LP)
SRAM bit cell (HC)

Samsung		TSMC		GlobalFoundries		STMicroelectronics
Value	40 nm Δ	Value	40 nm Δ	Value	40 nm Δ	Value	40 nm Δ
90 nm	0.70x	117 nm	0.72x	?nm	?x	?nm	?x
96 nm	0.82x	?nm	?x	?nm	?x	?nm	?x
0.120 µm²	?x	0.127 µm²	0.52x	0.120 µm²	?x	0.120 µm²	?x
		0.155 µm²				0.197 µm²	?x
						0.152 µm²	?x

28 nm Microprocessors

AMD
- A8
- A10

This list is incomplete; you can help by expanding it.

28 nm System on Chips

Intel
- Atom x3

This list is incomplete; you can help by expanding it.

@@ Line 9: / Line 9: @@
   |SRAM bit cell (HD)
   |SRAM bit cell (LP)
+ |SRAM bit cell (HC)
 }}
 {{scrolling table/mid}}
 |-
-! colspan="2" | [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[GlobalFoundries]]
+! colspan="2" | [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[GlobalFoundries]] !! colspan="2" | [[STMicroelectronics]]
 |-
-! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ
+! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ !! Value !! [[40 nm]] Δ
 |-
-| 90 nm || 0.70x || 117 nm || 0.72x || ?nm || ?x
+| 90 nm || 0.70x || 117 nm || 0.72x || ?nm || ?x || ?nm || ?x
 |-
-| 96 nm || 0.82x || ?nm || ?x || ?nm || ?x
+| 96 nm || 0.82x || ?nm || ?x || ?nm || ?x || ?nm || ?x
 |-
-| 0.120 µm<sup>2</sup> || ?x || 0.127 µm<sup>2</sup> || 0.52x || 0.120 µm<sup>2</sup> || ?x
+| 0.120 µm<sup>2</sup> || ?x || 0.127 µm<sup>2</sup> || 0.52x || 0.120 µm<sup>2</sup> || ?x || 0.120 µm<sup>2</sup> || ?x
 |-
-|  || || 0.155 µm<sup>2</sup> || || ||
+|  || || 0.155 µm<sup>2</sup> || || || || 0.197 µm<sup>2</sup> || ?x
+|-
+|  || || || || || || 0.152 µm<sup>2</sup> || ?x
 {{scrolling table/end}}

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Intel

AMD

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Samsung

Intel

AMD

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Qualcomm

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Samsung

Revision as of 21:43, 25 April 2016

Industry

28 nm Microprocessors

28 nm System on Chips