Semiconductor & Computer Engineering
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Difference between revisions of "22 nm lithography process"
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Revision as of 01:32, 24 April 2016
Semiconductor lithography processes technology
The 22 nm lithography process is a full node semiconductor manufacturing process following the 28 nm process stopgap. Commercial integrated circuit manufacturing using 22 nm process began in 2008 for memory and 2012 for MPUs. This technology was replaced by with 20 nm process (HN) in 2014 and 16 nm process (FN) in late 2015.
Contents
Industry
The 22 nm became Intel's first generation of Tri-gate FinFET transistors and the first such transistor on the market. This process became 3rd generation high-k + metal gate transistors for Intel. Those transistors were not used in IBM's process
| Fab |
|---|
| |
| Fin Pitch |
| Fin Width |
| Fin Height |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HP) |
| SRAM bit cell (HD) |
| Intel | Common Platform | ||
|---|---|---|---|
| Value | 32 nm Δ | Value | 32 nm Δ |
| 60 nm | N/A | ||
| 32 nm | |||
| 8 nm | |||
| 90 nm | 0.80x | 100 nm | 0.79x |
| 80 nm | 0.71x | 80 nm | ?x |
| 0.1080 µm2 | 0.63x | 0.1 µm2 | ?x |
| 0.092 µm2 | ?x | ||
Design Rules
| SoC Interconnect Design Rules | |||||
|---|---|---|---|---|---|
| Layer | Pitch | Process | Dielectric Materials | CPU | SoC |
| Fin | 60 nm | - | - | Fin | Fin |
| Contact | 90 nm | SAC | - | Contact | Contact |
| M1 | 90 nm | SAV | ULK CDO | M1 | M1 |
| MT - 1x | 80 nm | SAV | ULK CDO | M2/M3 | 2-6 layers |
| MT - 1.4x | 112 nm | SAV | ULK CDO | M4 | Semi-global |
| MT - 2x | 160 nm | SAV | ULK CDO | M5 | Semi-global |
| MT - 3x | 240 nm | SAV | ULK CDO | M6 | Global Routing |
| MT - 4x | 320 nm 360 nm |
Via First | LK CDO | M7/M8 | Global Routing |
| MT - TOP | 14 µm | Plate Up | Polymer | M9 | Top Metal |
22 nm Microprocessors
- Intel
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22 nm System on Chips
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22 nm Microarchitectures
- Intel:
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