Revision as of 00:57, 6 November 2017

Semiconductor lithography processes technology

1 nm 2 nm 3 nm 5 nm 7 nm 10 nm 14 nm 16 nm 20 nm 22 nm 28 nm 32 nm 40 nm 45 nm 55 nm 65 nm 80 nm 90 nm 110 nm 130 nm 150 nm 180 nm 220 nm 240 nm 250 nm 280 nm 350 nm 500 nm 600 nm 650 nm 700 nm 750 nm 800 nm 1 µm 1.2 µm 1.3 µm 1.5 µm 2 µm 2.5 µm 3 µm 3.5 µm 5 µm 6 µm 7 µm 8 µm 10 µm 16 µm 20 µm 50 µm

v · d · e

The 90 nanometer (90 nm) lithography process is a full node semiconductor manufacturing process following the 110 nm process stopgap. Commercial integrated circuit manufacturing using 90 nm process began in 2003. This technology was superseded by the 80 nm process (HN) / 65 nm process (FN) in 2006.

Industry

Introduced in late 2002, Intel's 90 nm process became the first volume production to introduce strained silicon transistors.

90 nm Microprocessors

• AMD
  • Athlon 64
  • Athlon 64 X2
  • FX
  • Opteron
  • Turion 64
  • Turion 64 X2
• Cavium
  • OCTEON Plus
• HAL (Fujitsu)
  • SPARC64 V
• IBM
  • PowerPC 970
• Loongson
  • Godson 2
• Qualcomm
  • MSM6xxx
• Sun
  • UltraSPARC T1
• Intel
  • Pentium 4 Extreme Edition
  • Pentium M
  • Pentium D
  • EP80579

This list is incomplete; you can help by expanding it.

90 nm Microarchitectures

• AMD
  • K8
• ARM
  • ARM7
• IBM
  • z9
• Intel
  • Pentium M

This list is incomplete; you can help by expanding it.

Documents

• Samsung foundry - 45 nm, 65 nm, 90 nm guide (August, 2007)