Difference between revisions of "350 nm lithography process"

Revision as of 21:49, 18 May 2016

Semiconductor lithography processes technology

The 350 nm lithography process is a full node semiconductor manufacturing process following the 500 nm process node. Commercial integrated circuit manufacturing using 350 nm process began in late 1995. 350 nm was phased out and replaced by 250 nm in 1999.

Industry

Fab
Process Name
1st Production
Metal Layers

Contacted Gate Pitch
Interconnect Pitch (M1P)
SRAM bit cell

Intel		IBM		AMD		DEC		Fujitsu		IDT		NEC		TI		Motorola		Hitachi
P854				CS-34		CMOS-6		CS-60								HiPerMOS 2
1994		1994		1995		1995		1996		1996		1995		1997		1996
4		5		5		6		5		3		4		5
Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ	Value	500 nm Δ
550 nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x
880 nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x	? nm	?x
18.1 µm²	0.41x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	21.67 µm²	?x

Design Rules

Intel 0.350 micron Design Rules
Layer	Pitch	Thick
Isolation	? nm	? nm
Polysilicon	? nm	? nm
Metal 1	880 nm	600 nm
Metal 2	1.16 µm	800 nm
Metal 3	1.16 µm	800 nm
Metal 4	1.70 µm	1.70 µm

350 nm Microprocessors

This list is incomplete; you can help by expanding it.

350 nm Microarchitectures

This list is incomplete; you can help by expanding it.

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 * AMD
 ** {{amd|Am486#Enhanced Am486|Enhanced Am486}}
+** {{amd|Am5x86}}
 ** {{amd|K6}}
 * DEC

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