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    Difference between revisions of "28 nm lithography process"    
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| − | The '''28 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm lithography process|32 nm]] and [[22 nm lithography process|22 nm]] processes. Commercial [[integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]].  | + | The '''28 nanometer (28 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm lithography process|32 nm]] and [[22 nm lithography process|22 nm]] processes. Commercial [[integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]].  | 
== Industry ==  | == Industry ==  | ||
Revision as of 03:56, 24 May 2016
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
| Fab | 
|---|
| Wafer | 
|  | 
| Contacted Gate Pitch | 
| Interconnect Pitch (M1P) | 
| SRAM bit cell (HD) | 
| SRAM bit cell (LP) | 
| SRAM bit cell (HC) | 
| Samsung | TSMC | GlobalFoundries | STMicroelectronics | UMC | |||||
|---|---|---|---|---|---|---|---|---|---|
| 300mm | |||||||||
| Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | 
| 90 nm | 0.70x | 117 nm | 0.72x | ?nm | ?x | ?nm | ?x | ?nm | ?x | 
| 96 nm | 0.82x | ?nm | ?x | ?nm | ?x | ?nm | ?x | ?nm | ?x | 
| 0.120 µm2 | ?x | 0.127 µm2 | 0.52x | 0.120 µm2 | ?x | 0.120 µm2 | ?x | 0.124 µm2 | ?x | 
| 0.155 µm2 | 0.197 µm2 | ?x | ? µm2 | ?x | |||||
| 0.152 µm2 | ?x | ||||||||
28 nm Microprocessors
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28 nm System on Chips
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