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Difference between revisions of "800 nm lithography process"

(Industry)
(Industry)
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  |Process Name
 
  |Process Name
 
  |1st Production
 
  |1st Production
 +
|Metal Layers
 +
| 
 
  |Contacted Gate Pitch
 
  |Contacted Gate Pitch
 
  |Interconnect Pitch (M1P)
 
  |Interconnect Pitch (M1P)
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{{scrolling table/mid}}
 
{{scrolling table/mid}}
 
|-
 
|-
! [[Intel]] (BICMOS) !! [[Intel]] (CHMOS V) !! colspan="2" | [[Intel]] (CMOS) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (BiCMOS)
+
! [[Intel]] (BICMOS) !! [[Intel]] (CHMOS V) !! colspan="2" | [[Intel]] (CMOS) !! [[TI]] (CMOS) !! [[TI]] (BiCMOS) !! [[Cypress]] !! [[AMD]] !! [[Motorola]] !! [[NEC]] !! [[HP]] !! [[HP]] !! [[National Semiconductor|National]] (ASIC BiCMOS) !! [[National Semiconductor|National]] (Memory BiCMOS)
 
|- style="text-align: center;"
 
|- style="text-align: center;"
| || ||  colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV
+
| || ||  colspan="2" | P650 || || || || || || || CMOS26B || CMOS26G || ABiC IV || BiCMOS III
 
|- style="text-align: center;"
 
|- style="text-align: center;"
| 1991 || 1990 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1991 || 1991 || 1991 || 1991 ||  || 1991
+
| 1991 || 1990 || colspan="2" | 1989 || 1991 || 1991 || 1989 || 1991 || 1991 || 1991 || 1991 ||  || 1990 || 1990
 +
|-
 +
|  || 2 || colspan="2" | 3 || 2 || 2 || 2 ||  || 3 || 2 || 3 ||  || 4 || 2
 
|-
 
|-
| ? nm  || ? nm || ? nm || ?x || ? nm || ? nm || ? nm  || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm
+
! Value !! Value !! Value !! [[1 µm]] Δ !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value !! Value
 
|-
 
|-
| ? nm  || ? nm || ? nm || ?x || ? nm || ? nm || ? nm  || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm
+
| ? nm  || ? nm || ? nm || ?x || ? nm || ? nm || ? nm  || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm || ? nm
 
|-
 
|-
| ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  111 µm<sup>2</sup> || 0.50x ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> || ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup>
+
| ? nm  || ? nm || ? nm || ?x || ? nm || ? nm || ? nm  || ? nm || ? nm || ? nm || ? nm || ? nm || 2.5 µm || 1.8 µm
 +
|-
 +
| ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  111 µm<sup>2</sup> || 0.50x ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> || ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  ? µm<sup>2</sup> ||  100 µm<sup>2</sup> || ? µm<sup>2</sup>
 
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{{scrolling table/end}}
  

Revision as of 06:29, 27 April 2016

The 800 nm lithography process was a semiconductor manufacturing process used by the leading integrated circuit manufacturers in early 1990s. This process was later replaced by 650 nm, 600 nm, and 500 nm processes.

Industry

Fab
Process Name​
1st Production​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel (BICMOS) Intel (CHMOS V) Intel (CMOS) TI (CMOS) TI (BiCMOS) Cypress AMD Motorola NEC HP HP National (ASIC BiCMOS) National (Memory BiCMOS)
P650 CMOS26B CMOS26G ABiC IV BiCMOS III
1991 1990 1989 1991 1991 1989 1991 1991 1991 1991 1990 1990
2 3 2 2 2 3 2 3 4 2
Value Value Value 1 µm Δ Value Value Value Value Value Value Value Value Value Value
 ? nm  ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm
 ? nm  ? nm  ? nm  ?x  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm  ? nm 2.5 µm 1.8 µm
 ? µm2  ? µm2 111 µm2 0.50x  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2  ? µm2 100 µm2  ? µm2

800 nm Microprocessors

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