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Difference between revisions of "10 µm lithography process"

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! [[Intel]] !! [[TI]] !! [[RCA]] !! [[Fairchild]]
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! [[Intel]] !! [[TI]] !! [[RCA]] !! [[Fairchild]] !! [[National Semiconductor|National]]
 
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| ? nm  || ? nm || ? nm  || ? nm  
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| ? nm  || ? nm || ? nm  || ? nm || ? nm  
 
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| 2 || 2 || 2 || 2
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Revision as of 05:55, 26 April 2016

The 10 µm lithography process was the semiconductor process technology used by the major semiconductor companies during the years of 1967 and 1973. The typical wafer size for this process at companies such as Fairchild and TI were 1.5 inch (38 mm).

Industry

Fab
Process Name​
1st Production​
Contacted Gate Pitch​
Interconnect Pitch​
Metal Layers​
Technology​
Wafer
Intel TI RCA Fairchild National
 
1970 1969 1969
 ? nm  ? nm  ? nm  ? nm  ? nm
 ? nm  ? nm  ? nm  ? nm  ? nm
2 2 2 2
PMOS PMOS PMOS PMOS PMOS
51 mm

10 µm Microprocessors

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10 µm Chips

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