Difference between revisions of "130 nm lithography process"

Revision as of 02:37, 24 April 2016

Semiconductor lithography processes technology

The 130 nm lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.

Industry

Fab
Type

Contacted Gate Pitch
Interconnect Pitch (M1P)
SRAM bit cell

Intel		TSMC		Samsung		IBM
Bulk						PDSOI
Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ
319 nm	0.66x	310 nm	?x	350 nm	?x	350 nm	?x
345 nm	0.69x	340 nm	?x	350 nm	?x	? nm	?x
2.0 µm²	0.36x	? µm²	?x	? µm²	?x	1.8 µm²	?x

Design Rules

Intel 130nm Design Rules
Layer	Pitch	Thick	Aspect Ratio
Isolation	345 nm	450 nm	-
Polysilicon	319 nm	160 nm	-
Metal 1	293 nm	280 nm	1.7
Metal 2	425 nm	360 nm	1.7
Metal 3	425 nm	360 nm	1.7
Metal 4	718 nm	570 nm	1.6
Metal 5	1.064 µm	900 nm	1.7
Metal 6	1.143 µm	1.2 µm	2.1

130 nm Microprocessors

This list is incomplete; you can help by expanding it.

130 nm System on Chips

This list is incomplete; you can help by expanding it.

130 nm Microarchitectures

This list is incomplete; you can help by expanding it.

@@ Line 3: / Line 3: @@
 == Industry ==
+{{scrolling table/top|style=text-align: right; | first=Fab
-=== Intel ===
+ |Type
-* 200mm (8-inch) wafers
+ |&nbsp;
-{| class="wikitable"
+ |Contacted Gate Pitch
+ |Interconnect Pitch (M1P)
+ |SRAM bit cell
+}}
+{{scrolling table/mid}}
 |-
-| || Measurement || Scaling from [[180 nm]]
+! colspan="2" | [[Intel]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Samsung]] !! colspan="2" | [[IBM]]
 |-
-| Contacted Gate Pitch || 319 nm || 0.66x
+| colspan="6" | Bulk || colspan="2" | PDSOI
 |-
-| Interconnect Pitch (M1P) || 345 nm || 0.69x
+! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ
 |-
-| [[SRAM]] bit cell || 2.0 µm<sup>2</sup> || 0.36x
+| 319 nm || 0.66x || 310 nm || ?x || 350 nm || ?x || 350 nm || ?x
-|}
-{| class="wikitable"
 |-
-! colspan="4" | Design Rules
+| 345 nm || 0.69x || 340 nm || ?x || 350 nm || ?x || ? nm || ?x
+|-
+| 2.0 µm<sup>2</sup> || 0.36x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x || 1.8 µm<sup>2</sup> || ?x
+{{scrolling table/end}}
+=== Design Rules ===
+{| class="wikitable collapsible collapsed"
+|-
+! colspan="4" | Intel 130nm Design Rules
 |-
 ! Layer !! Pitch !! Thick !! Aspect Ratio

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Revision as of 02:37, 24 April 2016

Contents

Industry

Design Rules

130 nm Microprocessors

130 nm System on Chips

130 nm Microarchitectures