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(error corrected from 55nm to 150nm) |
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{{lithography processes}} | {{lithography processes}} | ||
− | The '''150 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[180 nm lithography process|180 nm]] and [[130 nm lithography process|130 nm]] processes. Commercial [[integrated circuit]] manufacturing using | + | The '''150 nanometer (150 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[180 nm lithography process|180 nm]] and [[130 nm lithography process|130 nm]] processes. Commercial [[integrated circuit]] manufacturing using 150 nm process began in early 2000s. This technology superseded by commercial [[130 nm]], [[110 nm]], and [[90 nm]] processes. |
== Industry == | == Industry == | ||
+ | On December 16, 1999, [[Samsung]] announced the development of a $1.8B ''Line 10'', a 1M meter² site in Hwasung-gun, Kyonggi Province. Line 10 was dedicated for the production of 128 MiB, 256 MiB and [[Rambus]] [[DRAM]]s on a 150 nm process. Line 10 opened in the third quarter of [[2000]] producing 16,000 [[wafer size|200 mm wafers]] per month going into full capacity in the in the first quarter of [[2001]] producing 32,000 [[wafers]] a month. | ||
{{scrolling table/top|style=text-align: right; | first=Fab | {{scrolling table/top|style=text-align: right; | first=Fab | ||
|Process Name | |Process Name | ||
|1st Production | |1st Production | ||
+ | |Metal Layers | ||
| | | | ||
|Contacted Gate Pitch | |Contacted Gate Pitch | ||
Line 13: | Line 15: | ||
{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
− | ! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]] | + | ! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]] !! colspan="2" | [[Samsung]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="2" | || colspan="2" | CS-85 | + | | colspan="2" | || colspan="2" | CS-85 || colspan="2" | |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | colspan="2" | 2000 || colspan="2" | 2002 | + | | colspan="2" | 2000 || colspan="2" | 2002 || colspan="2" | 2002 |
+ | |- style="text-align: center;" | ||
+ | | colspan="2" | || colspan="2" | 6 || colspan="2" | | ||
|- | |- | ||
− | ! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ | + | ! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ !! Value !! [[180 nm]] Δ |
|- | |- | ||
− | | ? nm || ?x || ? nm || ?x | + | | ? nm || ?x || ? nm || ?x || ? nm || ?x |
|- | |- | ||
− | | ? nm || ?x || ? nm || ?x | + | | ? nm || ?x || ? nm || ?x || ? nm || ?x |
|- | |- | ||
− | | 3.42 µm<sup>2</sup> || 0.74x || ? µm<sup>2</sup> || ?x | + | | 3.42 µm<sup>2</sup> || 0.74x || ? µm<sup>2</sup> || ?x || ? µm<sup>2</sup> || ?x |
{{scrolling table/end}} | {{scrolling table/end}} | ||
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* Cyrix | * Cyrix | ||
** {{cyrix|Cyrix III}} | ** {{cyrix|Cyrix III}} | ||
+ | * HAL (Fujitsu) | ||
+ | ** {{hal|SPARC64 GP}} | ||
{{expand list}} | {{expand list}} | ||
+ | |||
+ | |||
+ | == 150 nm microarchitectures == | ||
+ | * VIA Technologies | ||
+ | ** {{via|Samuel 2|l=arch}} | ||
+ | |||
+ | [[category:lithography]] |
Latest revision as of 01:56, 27 September 2020
The 150 nanometer (150 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 180 nm and 130 nm processes. Commercial integrated circuit manufacturing using 150 nm process began in early 2000s. This technology superseded by commercial 130 nm, 110 nm, and 90 nm processes.
Industry[edit]
On December 16, 1999, Samsung announced the development of a $1.8B Line 10, a 1M meter² site in Hwasung-gun, Kyonggi Province. Line 10 was dedicated for the production of 128 MiB, 256 MiB and Rambus DRAMs on a 150 nm process. Line 10 opened in the third quarter of 2000 producing 16,000 200 mm wafers per month going into full capacity in the in the first quarter of 2001 producing 32,000 wafers a month.
Fab |
---|
Process Name |
1st Production |
Metal Layers |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell |
TSMC | Fujitsu | Samsung | |||
---|---|---|---|---|---|
CS-85 | |||||
2000 | 2002 | 2002 | |||
6 | |||||
Value | 180 nm Δ | Value | 180 nm Δ | Value | 180 nm Δ |
? nm | ?x | ? nm | ?x | ? nm | ?x |
? nm | ?x | ? nm | ?x | ? nm | ?x |
3.42 µm2 | 0.74x | ? µm2 | ?x | ? µm2 | ?x |
150 nm Microprocessors[edit]
- Cyrix
- HAL (Fujitsu)
This list is incomplete; you can help by expanding it.
150 nm microarchitectures[edit]
- VIA Technologies