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Difference between revisions of "1.3 µm lithography process"
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(MB86900 was on 1.3μm, earliest I've seen pics of was October) |
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{{lithography processes}} | {{lithography processes}} | ||
− | The '''1. | + | The '''1.3 µm lithography process''' was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out from the late 1980s to the early 1990s and replaced by [[1 µm]], [[800 nm]], and [[650 nm]] processes. |
== Industry == | == Industry == | ||
Line 6: | Line 6: | ||
|Process Name | |Process Name | ||
|1st Production | |1st Production | ||
+ | |Voltage | ||
| | | | ||
− | | | + | |Gate Length |
|Interconnect Pitch (M1P) | |Interconnect Pitch (M1P) | ||
|SRAM bit cell | |SRAM bit cell | ||
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{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
− | ! [[Motorola]] !! [[Hitachi]] !! [[Fujitsu]] | + | ! [[Motorola]] !! colspan="2" | [[Hitachi]] !! [[Fujitsu]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | || || | + | | || colspan="2" | Hi-CMOS III || |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | 1987 || 1987 || | + | | 1987 || colspan="2" | 1987 || 1986? |
|- | |- | ||
− | + | | || colspan="2" | 5 V || | |
|- | |- | ||
− | + | ! Value !! Value !! [[2 µm]] Δ !! Value | |
|- | |- | ||
− | | ? nm || | + | | ? nm || 1.2 µm || 0.60x || ? nm |
|- | |- | ||
− | | ? µm | + | | ? nm || 1.3 µm || 0.43x || nm |
+ | |- | ||
+ | | ? µm² || ? µm² || || ? µm² | ||
{{scrolling table/end}} | {{scrolling table/end}} | ||
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{{expand list}} | {{expand list}} | ||
− | [[ | + | == References== |
+ | * Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984. | ||
+ | |||
+ | [[category:lithography]] |
Latest revision as of 11:57, 23 October 2022
The 1.3 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out from the late 1980s to the early 1990s and replaced by 1 µm, 800 nm, and 650 nm processes.
Industry[edit]
Fab |
---|
Process Name |
1st Production |
Voltage |
|
Gate Length |
Interconnect Pitch (M1P) |
SRAM bit cell |
Motorola | Hitachi | Fujitsu | |
---|---|---|---|
Hi-CMOS III | |||
1987 | 1987 | 1986? | |
5 V | |||
Value | Value | 2 µm Δ | Value |
? nm | 1.2 µm | 0.60x | ? nm |
? nm | 1.3 µm | 0.43x | nm |
? µm² | ? µm² | ? µm² |
1.3 µm Microprocessors[edit]
This list is incomplete; you can help by expanding it.
References[edit]
- Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.