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Difference between revisions of "1.2 µm lithography process"
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|Process Name | |Process Name | ||
|1st Production | |1st Production | ||
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|Interconnect Pitch (M1P) | |Interconnect Pitch (M1P) | ||
|SRAM bit cell | |SRAM bit cell | ||
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|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | 1987 || | + | | 1987 || 1988 |
+ | |- style="text-align: center;" | ||
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! Value !! Value | ! Value !! Value | ||
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− | | ? | + | | ? µm || ? µm |
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− | | ? | + | | ? µm || ? µm |
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− | | ? | + | | ? µm² || ? µm² |
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* MIPS (Fab'ed by [[NEC]]) | * MIPS (Fab'ed by [[NEC]]) | ||
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+ | * Qualcomm | ||
+ | ** {{qualcomm|MSM}} (prototype) | ||
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− | [[ | + | [[category:lithography]] |
Latest revision as of 22:04, 20 May 2018
The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.
Industry[edit]
Fab |
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Process Name |
1st Production |
Voltage |
|
Gate Length |
Interconnect Pitch (M1P) |
SRAM bit cell |
1.2 µm Microprocessors[edit]
This list is incomplete; you can help by expanding it.