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MSM (Mobile Station Modem) - Qualcomm
< qualcomm

Qualcomm MSM
qualcomm msm.png
Developer Qualcomm, Intel, ARM Holdings
Manufacturer IBM, TSMC, Samsung
Type System on chips
Introduction 1993 (announced)
1993 (launch)
Production 1994
Architecture System on a chip with wireless capabilities
ISA x86-16, ARMv4, ARMv5
µarch 80186, ARM7TDMI, ARM926EJ-S
Word size 16 bit
2 octets
4 nibbles
, 32 bit
4 octets
8 nibbles
,
Process 800 nm
0.8 μm
8.0e-4 mm
, 500 nm
0.5 μm
5.0e-4 mm
, 350 nm
0.35 μm
3.5e-4 mm
, 250 nm
0.25 μm
2.5e-4 mm
, 180 nm
0.18 μm
1.8e-4 mm
, 130 nm
0.13 μm
1.3e-4 mm
, 90 nm
0.09 μm
9.0e-5 mm
, 65 nm
0.065 μm
6.5e-5 mm
, 45 nm
0.045 μm
4.5e-5 mm
, 32 nm
0.032 μm
3.2e-5 mm
, 20 nm
0.02 μm
2.0e-5 mm
, 14 nm
0.014 μm
1.4e-5 mm
, 10 nm
0.01 μm
1.0e-5 mm
Technology CMOS
Clock 2.1 MHz-3,000 MHz

MSM (Mobile Station Modem) is a series of 2G/3G/4G-capable system on chips designed by Qualcomm since the early 1990s to date.

Overview[edit]

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Timeline[edit]

qualcomm msm breakdown.png
19901.2 µm80186First generation (R&D only)
MSM11993800 nm80186Second generation
MSM21995500 nm80186Third generation
MSM2300199580186Fourth generation
MSM30001995ARM7TDMIFifth generation
MSM31001998ARM7TDMISixth generation
MSM33002000ARM7TDMI
MSM4500N/AARM7TDMIAnnounced but not released
MSM50002001ARM7TDMI
MSM51052002ARM7TDMI
MSM51002001ARM7TDMI
MSM52002001ARM7TDMI
MSM55002001ARM7TDMI
MSM6xxx2002250 nm-65 nmARM7TDMI / ARM926EJ-S
MSM7xxx200490 nm-65 nm
Snapdragon S1200765 nm-45 nm
Snapdragon S2201045 nm
Snapdragon S3201045 nm
Snapdragon S4201245 nm-28 nm
Snapdragon 200201445 nm-28 nm
Snapdragon 400201328 nm
Snapdragon 600201328 nm-14 nm
Snapdragon 800201328 nm-10 nm


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designerQualcomm +, Intel + and ARM Holdings +
first announced1993 +
first launched1993 +
full page namequalcomm/msm +
instance ofsystem on a chip extended family +
instruction set architecturex86-16 +, ARMv4 + and ARMv5 +
main designerQualcomm +
manufacturerIBM +, TSMC + and Samsung +
microarchitecture80186 +, ARM7TDMI + and ARM926EJ-S +
nameQualcomm MSM +
process800 nm (0.8 μm, 8.0e-4 mm) +, 500 nm (0.5 μm, 5.0e-4 mm) +, 350 nm (0.35 μm, 3.5e-4 mm) +, 250 nm (0.25 μm, 2.5e-4 mm) +, 180 nm (0.18 μm, 1.8e-4 mm) +, 130 nm (0.13 μm, 1.3e-4 mm) +, 90 nm (0.09 μm, 9.0e-5 mm) +, 65 nm (0.065 μm, 6.5e-5 mm) +, 45 nm (0.045 μm, 4.5e-5 mm) +, 32 nm (0.032 μm, 3.2e-5 mm) +, 20 nm (0.02 μm, 2.0e-5 mm) +, 14 nm (0.014 μm, 1.4e-5 mm) + and 10 nm (0.01 μm, 1.0e-5 mm) +
technologyCMOS +
word size16 bit (2 octets, 4 nibbles) + and 32 bit (4 octets, 8 nibbles) +