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Difference between revisions of "1.2 µm lithography process"

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  |Process Name
 
  |Process Name
 
  |1st Production
 
  |1st Production
 +
|Voltage
 
  | 
 
  | 
  |Contacted Gate Pitch
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  |Gate Length
 
  |Interconnect Pitch (M1P)
 
  |Interconnect Pitch (M1P)
 
  |SRAM bit cell
 
  |SRAM bit cell
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{{scrolling table/mid}}
 
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|-
! [[Intel]] !! [[NEC]]
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! [[Intel]] !! [[NEC]]  
 
|- style="text-align: center;"
 
|- style="text-align: center;"
|  ||  
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|  ||    
 
|- style="text-align: center;"
 
|- style="text-align: center;"
 
| 1987 || 1988
 
| 1987 || 1988
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|- style="text-align: center;"
 +
|  ||   
 
|-
 
|-
 
! Value !! Value
 
! Value !! Value
 
|-
 
|-
| ? nm || ? nm
+
| ? µm || ? µm 
 
|-
 
|-
| ? nm || ? nm
+
| ? µm || ? µm
 
|-
 
|-
| ? µm<sup>2</sup> ||  ? µm<sup>2</sup>
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| ? µm² ||  ? µm²
 
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Revision as of 07:39, 7 April 2017

The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel NEC
 
1987 1988
 
Value Value
 ? µm  ? µm
 ? µm  ? µm
 ? µm²  ? µm²

1.2 µm Microprocessors

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