Revision as of 14:50, 3 November 2016

Semiconductor lithography processes technology

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The 14 nanometer (14 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 16 nm and 10 nm processes. The term "14 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial integrated circuit manufacturing using 14 nm process began in 2014. This technology is set to be replaced with 10 nm process in 2017.

Industry

14 nm became Intel's 2nd generation finFET transistors. This process became Samsungs' and GlobalFoundries first generation of finFet-based transistors. Intel uses TiN pMOS / TiAlN nMOS while Samsung uses TiN pMOS / TiAIC nMOS as work function metals.

Intel

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14 nm Microprocessors

• Intel
  • Core i3
  • Core i5
  • Core i7
  • Core i7EE
  • Xeon
  • Xeon E3
  • Xeon E5
  • Xeon E7

This list is incomplete; you can help by expanding it.

14 nm System on Chips

• Intel
  • Atom x5
  • Atom x7
  • Xeon D

This list is incomplete; you can help by expanding it.

14 nm Microarchitectures

• Intel
  • Airmont
  • Goldmont
  • Broadwell
  • Skylake
  • Kaby Lake
  • Coffee Lake
• AMD
  • Zen
  • Zen+

This list is incomplete; you can help by expanding it.

Documents

• A 14nm logic technology featuring 2 nd-generation FinFET, air-gapped interconnects, self-aligned double patterning and a 0.0588 µm 2 SRAM cell size, 15-17 Dec. 2014; 10.1109/IEDM.2014.7046976