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Difference between revisions of "28 nm lithography process"
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− | The '''28 nm lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm lithography process|32 nm]] and [[22 nm lithography process|22 nm]] processes. Commercial [[integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]]. | + | The '''28 nanometer (28 nm) lithography process''' is a [[technology node#half node|half-node]] semiconductor manufacturing process used as a stopgap between the [[32 nm lithography process|32 nm]] and [[22 nm lithography process|22 nm]] processes. Commercial [[integrated circuit]] manufacturing using 28 nm process began in 2011. This technology superseded by commercial [[22 nm lithography process|22 nm process]]. |
== Industry == | == Industry == |
Revision as of 03:56, 24 May 2016
The 28 nanometer (28 nm) lithography process is a half-node semiconductor manufacturing process used as a stopgap between the 32 nm and 22 nm processes. Commercial integrated circuit manufacturing using 28 nm process began in 2011. This technology superseded by commercial 22 nm process.
Industry
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Wafer |
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Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell (HD) |
SRAM bit cell (LP) |
SRAM bit cell (HC) |
Samsung | TSMC | GlobalFoundries | STMicroelectronics | UMC | |||||
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300mm | |||||||||
Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ | Value | 40 nm Δ |
90 nm | 0.70x | 117 nm | 0.72x | ?nm | ?x | ?nm | ?x | ?nm | ?x |
96 nm | 0.82x | ?nm | ?x | ?nm | ?x | ?nm | ?x | ?nm | ?x |
0.120 µm2 | ?x | 0.127 µm2 | 0.52x | 0.120 µm2 | ?x | 0.120 µm2 | ?x | 0.124 µm2 | ?x |
0.155 µm2 | 0.197 µm2 | ?x | ? µm2 | ?x | |||||
0.152 µm2 | ?x |
28 nm Microprocessors
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28 nm System on Chips
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