Semiconductor & Computer Engineering
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Difference between revisions of "65 nm lithography process"
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| − | ! colspan="2" | [[Intel]] !! colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] !! colspan="2" | [[TI]] !! colspan="2" | [[IBM]] / [[Chartered]] / [[Infineon]] / [[Samsung]] !! colspan="2" | [[TSMC]] | + | ! colspan="2" | [[Intel]] !! colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] !! colspan="2" | [[TI]] !! colspan="2" | [[IBM]] / [[Chartered]] / [[Infineon]] / [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]] |
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| − | ! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ | + | ! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ !! Value !! [[90 nm]] Δ |
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| − | | 220 nm || 0.85x || 250 nm || ?x || ? nm || ?x || 200 nm || 0.82x || 160 nm || 0.67x | + | | 220 nm || 0.85x || 250 nm || ?x || ? nm || ?x || 200 nm || 0.82x || 160 nm || 0.67x || ? nm || ?x |
|- | |- | ||
| − | | 210 nm || 0.95x || ? nm || ?x || ? nm || ?x || 180 nm || 0.73 || 180 nm || 0.75x | + | | 210 nm || 0.95x || ? nm || ?x || ? nm || ?x || 180 nm || 0.73 || 180 nm || 0.75x || ? nm || ?x |
|- | |- | ||
| − | | 0.570 µm<sup>2</sup> || 0.57x || 0.65 µm<sup>2</sup> || 0.65x || 0.49 µm<sup>2</sup> || || || || || | + | | 0.570 µm<sup>2</sup> || 0.57x || 0.65 µm<sup>2</sup> || 0.65x || 0.49 µm<sup>2</sup> || || || || || || || |
|- | |- | ||
| − | | 0.680 µm<sup>2</sup> || || 0.540 µm<sup>2</sup> || || 0.490 µm<sup>2</sup> || || 0.540 µm<sup>2</sup> || || || | + | | 0.680 µm<sup>2</sup> || || 0.540 µm<sup>2</sup> || || 0.490 µm<sup>2</sup> || || 0.540 µm<sup>2</sup> || || || || ? µm<sup>2</sup> || ?x |
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=== Design Rules === | === Design Rules === | ||
Revision as of 03:50, 24 April 2016
Semiconductor lithography processes technology
The 65 nm lithography process is a full node semiconductor manufacturing process following the 80 nm process stopgap. Commercial integrated circuit manufacturing using 65 nm process began in 2006. This technology was superseded by the 55 nm process (HN) / 45 nm process (FN) in 2007.
Contents
Industry
| Fab |
|---|
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HD) |
| SRAM bit cell (LP) |
| Intel | IBM / Toshiba / Sony / AMD | TI | IBM / Chartered / Infineon / Samsung | TSMC | Fujitsu | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ | Value | 90 nm Δ |
| 220 nm | 0.85x | 250 nm | ?x | ? nm | ?x | 200 nm | 0.82x | 160 nm | 0.67x | ? nm | ?x |
| 210 nm | 0.95x | ? nm | ?x | ? nm | ?x | 180 nm | 0.73 | 180 nm | 0.75x | ? nm | ?x |
| 0.570 µm2 | 0.57x | 0.65 µm2 | 0.65x | 0.49 µm2 | |||||||
| 0.680 µm2 | 0.540 µm2 | 0.490 µm2 | 0.540 µm2 | ? µm2 | ?x | ||||||
Design Rules
| Intel 65nm Design Rules | |||
|---|---|---|---|
| Layer | Pitch | Thick | Aspect Ratio |
| Isolation | 220 nm | 320 nm | - |
| Polysilicon | 220 nm | 90 nm | - |
| Contacted Gate | 220 nm | - | |
| Metal 1 | 210 nm | 170 nm | 1.6 |
| Metal 2 | 210 nm | 190 nm | 1.8 |
| Metal 3 | 220 nm | 200 nm | 1.8 |
| Metal 4 | 280 nm | 250 nm | 1.8 |
| Metal 5 | 330 nm | 300 nm | 1.8 |
| Metal 6 | 480 nm | 430 nm | 1.8 |
| Metal 7 | 720 nm | 650 nm | 1.8 |
| Metal 8 | 1.80 µm | 975 nm | 1.8 |
65 nm Microprocessors
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65 nm System on Chips
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65 nm Microarchitectures
- Intel
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