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Difference between revisions of "180 nm lithography process"
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== Industry == | == Industry == | ||
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects. | The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects. | ||
| − | === | + | == Industry == |
| − | + | {{scrolling table/top|style=text-align: right; | first=Fab | |
| − | { | + | |Type |
| + | |Contacted Gate Pitch | ||
| + | |Interconnect Pitch (M1P) | ||
| + | |SRAM bit cell | ||
| + | }} | ||
| + | {{scrolling table/mid}} | ||
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| − | | | | + | ! colspan="2" | [[Intel]] !! colspan="2" | [[Fujitsu]] |
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| − | + | ! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ | |
|- | |- | ||
| − | | | + | | 480 nm || ?x || ? nm || ?x |
|- | |- | ||
| − | | | + | | 500 nm || ?x || ? nm || ?x |
| − | + | |- | |
| + | | 5.59 µm<sup>2</sup> || .56x || 4.18 µm<sup>2</sup> || ?x | ||
| + | {{scrolling table/end}} | ||
== 180 nm Microprocessors== | == 180 nm Microprocessors== | ||
Revision as of 03:15, 24 April 2016
Semiconductor lithography processes technology
The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.
Contents
Industry
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
Industry
| Fab |
|---|
| Type |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel | Fujitsu | ||
|---|---|---|---|
| Value | 250 nm Δ | Value | 250 nm Δ |
| 480 nm | ?x | ? nm | ?x |
| 500 nm | ?x | ? nm | ?x |
| 5.59 µm2 | .56x | 4.18 µm2 | ?x |
180 nm Microprocessors
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180 nm System on Chips
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180 nm Microarchitectures
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