The 130 nanometer (130 nm) lithography process is a full node semiconductor manufacturing process following the 150 nm process stopgap. Commercial integrated circuit manufacturing using 130 nm process began in 2001. This technology was replaced by with 110 nm process (HN) in 2003 and 90 nm process (FN) in 2004.

Industry

Fab
Process Name​
1st Production​
Type​
Wafer​
Metal Layers​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HP)​​
SRAM bit cell (HD)​

Intel		TSMC		Samsung		Fujitsu		IBM / Infineon / UMC		Motorola		AMD		NEC		NEC		TI		TI
P860						CS-91		CMOS 9S		HiPerMOS 7
2001		2001		2001		2002		2001		2001		2002		2001		2001		2001
Bulk								PDSOI		Bulk
200 mm
6								8		8				5		7		6		7
Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ	Value	180 nm Δ
319 nm	0.66x	310 nm	0.72x	350 nm	?x	? nm	?x	320 nm	0.76x	350 nm	?x	350 nm	?x	?nm	?x	?nm	?x	?nm	?x	?nm	?x
345 nm	0.69x	340 nm	0.74x	350 nm	?x	? nm	?x	320 nm	0.73x	350 nm	?x	350 nm	?x	?nm	?x	?nm	?x	?nm	?x	?nm	?x
2.45 µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x
2.09 µm²	0.36x	2.14 µm²	0.46x	? µm²	?x	1.98 µm²	0.47x	1.8 µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x	? µm²	?x

Design Rules

Intel 130nm Design Rules
Layer	Pitch	Thick	Aspect Ratio
Isolation	345 nm	450 nm	-
Polysilicon	319 nm	160 nm	-
Metal 1	293 nm	280 nm	1.7
Metal 2	425 nm	360 nm	1.7
Metal 3	425 nm	360 nm	1.7
Metal 4	718 nm	570 nm	1.6
Metal 5	1.064 µm	900 nm	1.7
Metal 6	1.143 µm	1.2 µm	2.1

130 nm Microprocessors

• Ambric
  • Am2000
• AMD
  • Athlon 64
  • Athlon MP
  • Athlon XP
  • Athlon XP-M
  • Geode NX
  • FX
  • Opteron
• Cavium
  • OCTEON
• HAL (Fujitsu)
  • SPARC64 V
• IBM
  • Power4+
  • Power5
• Intel
  • Pentium III
  • Pentium III-M
  • Pentium M
  • Pentium 4 Extreme Edition
• Intrinsity
  • FastMATH
• Loongson
  • Godson 2
• Qualcomm
  • MSM6xxx
• SGI
  • R14000
  • R14000A
• Sun
  • UltraSPARC IIi
  • UltraSPARC III Cu
  • UltraSPARC IIIi

• NUDT
  • FT-64

This list is incomplete; you can help by expanding it.

130 nm programmable logic devices

• MathStar
  • Builder

This list is incomplete; you can help by expanding it.

130 nm Microarchitectures

• AMD
  • K8
• ARM
  • ARM7
• IBM
  • z990
• VIA Technologies
  • Nehemiah

This list is incomplete; you can help by expanding it.

References

• Tyagi, Sunit, et al. "A 130 nm generation logic technology featuring 70 nm transistors, dual Vt transistors and 6 layers of Cu interconnects." Electron Devices Meeting, 2000. IEDM'00. Technical Digest. International. IEEE, 2000.