From WikiChip
Difference between revisions of "1.3 µm lithography process"

(Separate update of phase-out timing based on the 1 µm article.)
(MB86900 was on 1.3μm, earliest I've seen pics of was October)
 
Line 18: Line 18:
 
|  || colspan="2" | Hi-CMOS III ||  
 
|  || colspan="2" | Hi-CMOS III ||  
 
|- style="text-align: center;"
 
|- style="text-align: center;"
| 1987 || colspan="2" | 1987 ||
+
| 1987 || colspan="2" | 1987 || 1986?
 
|-
 
|-
 
| || colspan="2" | 5 V ||
 
| || colspan="2" | 5 V ||

Latest revision as of 12:57, 23 October 2022

The 1.3 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out from the late 1980s to the early 1990s and replaced by 1 µm, 800 nm, and 650 nm processes.

Industry[edit]

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Motorola Hitachi Fujitsu
Hi-CMOS III  
1987 1987 1986?
5 V
Value Value 2 µm Δ Value
 ? nm 1.2 µm 0.60x  ? nm
 ? nm 1.3 µm 0.43x nm
 ? µm²  ? µm²  ? µm²

1.3 µm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

References[edit]

  • Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.