The 280 nanometer (280 nm) lithography process is was semiconductor manufacturing process following the 350 nm process. Commercial integrated circuit manufacturing using 280 nm process began in late 1990s. 280 nm and was phased out and later replaced by 250 nm, 220 nm, and 180 nm processes.

Industry

Around 1996 Intel introduced a stopgap shrink between 0.35 µm and 0.35 µm, the process was used in Intel's Klamath P6 core.

Fab
Process Name​
1st Production​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
Metal Layers​
SRAM bit cell

Intel	Motorola
P854.5?	HiPerMOS 3
1996	1997
? nm	? nm
? nm	? nm
4	?
? µm²	? µm²

280 nm Microprocessors

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280 nm Microarchitectures

• Intel P6

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