-
WikiChip
WikiChip
-
Architectures
Popular x86
-
Intel
- Client
- Server
- Big Cores
- Small Cores
-
AMD
Popular ARM
-
ARM
- Server
- Big
- Little
-
Cavium
-
Samsung
-
-
Chips
Popular Families
-
Ampere
-
Apple
-
Cavium
-
HiSilicon
-
MediaTek
-
NXP
-
Qualcomm
-
Renesas
-
Samsung
-
From WikiChip
1.5 µm lithography process
Semiconductor lithography processes technology |
|
The 1.5 µm lithography process was the semiconductor process technology used by the major semiconductor companies in the mid 1980s. By the late 80s this process was replaced by 1.3 µm, 1.2 µm, and 1 µm processes.
Industry
Fab |
---|
Process Name |
1st Production |
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
Metal Layers |
SRAM bit cell |
Wafer |
Intel | Intel (CHMOS III) | HP |
---|---|---|
P646 | NMOS III | |
1982 | 1985 | 1981 |
? nm | ? nm | 1.5 µm |
? nm | ? nm | 2.5 µm |
2 | 2 | 2 |
? µm2 | ? µm2 | |
125 mm | 150 mm |
Design Rules
HP NMOS-III Design Rules | |
---|---|
Layer | Description |
Oxide | 450 nm thick silicon dioxide 1.5 µm x 1.5 µm minimum contact area, zero overlap to polysilicon, zero overlap of first metal layer |
M1 | 1.5 µm wide line / 1.0 µm space 0.4 ohm/square sheet resistance |
Intemediate Oxide | 550 nm-thick silicon dioxide 1.5 µm x 2.0 µm minimum contact area, zero overlap to first metal layer 2.0 µm overlap of second metal layer to via |
M2 | 5.0 µm wide line / 3.0 µm space 0.4 ohm/square sheet resistance |
1.5 µm Microprocessors
This list is incomplete; you can help by expanding it.