The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.

Industry

The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.

Industry

Fujitsu's 0.18 micron process (CS-80) is 6-layer FSG based.

Fab
Process Name​
1st Production​
​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell

Intel		Fujitsu		TSMC		Motorola
P858		CS-80				HiPerMOS 6
1999		2000		2000		2000
Value	250 nm Δ	Value	250 nm Δ	Value	250 nm Δ	Value	220 nm Δ
480 nm	0.96x	? nm	?x	? nm	?x	? nm	?x
500 nm	0.82x	? nm	?x	? nm	?x	? nm	?x
5.59 µm2	0.54x	4.18 µm2	?x	4.65	0.62x	? µm2	?x

180 nm Microprocessors

• Intel
  • Mobile Pentium III
  • Pentium 4

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180 nm Microarchitectures

This list is incomplete; you can help by expanding it.