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Difference between revisions of "1.3 µm lithography process"

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* Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
 
* Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
  
[[Category:Lithography]]
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[[category:lithography]]

Revision as of 22:04, 20 May 2018

The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Motorola Hitachi Fujitsu
Hi-CMOS III  
1987 1987
5 V
Value Value 2 µm Δ Value
 ? nm 1.2 µm 0.60x  ? nm
 ? nm 1.3 µm 0.43x nm
 ? µm²  ? µm²  ? µm²

1.3 µm Microprocessors

This list is incomplete; you can help by expanding it.

References

  • Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.