Revision as of 17:40, 8 April 2017

Semiconductor lithography processes technology

1 nm 2 nm 3 nm 5 nm 7 nm 10 nm 14 nm 16 nm 20 nm 22 nm 28 nm 32 nm 40 nm 45 nm 55 nm 65 nm 80 nm 90 nm 110 nm 130 nm 150 nm 180 nm 220 nm 240 nm 250 nm 280 nm 350 nm 500 nm 600 nm 650 nm 700 nm 750 nm 800 nm 1 µm 1.2 µm 1.3 µm 1.5 µm 2 µm 2.5 µm 3 µm 3.5 µm 5 µm 6 µm 7 µm 8 µm 10 µm 16 µm 20 µm 50 µm

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The 8 µm lithography process (8-micron) was the semiconductor process technology used for early FET devices by leading semiconductor companies during the late early 1970s. This process had a smallest feature or gate length of roughly 8 µm between the source and drain (Poly-SI channel implant). The typical wafer size for this process at companies such as Fairchild and TI was 2-inch (51 mm). This process was later superseded by 6 µm, 5 µm, and 3 µm processes.

Industry

The 8-micron process was used by Intel for many of their memory chips in the early 1970s such as the 2104 which was released in 1972 and became the first truly widely used DRAM chip. Those chips used Si-gate nMOS transistors using a polysilicon word line and an aluminum metal bit line. Alternatively to that was Mostek's which created a 4 Kib chip using an aluminum metal word line and drain diffusion for the bit line^[1].

8 µm Microprocessors

• TI
  • TMS1000
• MOS Technology
  • MCS6500

This list is incomplete; you can help by expanding it.

8 µm Chips

• Intel
  • 1103, 1 Kib DRAM, worlds first commercial DRAM
  • 2104, 4 Kib DRAM, world first widely used & mass produced (especially in the PC)

References

• Dr. Neil Berglund, Intel Corporation; The evolution of MOS process technology.

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