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Difference between revisions of "1.2 µm lithography process"
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|Voltage | |Voltage | ||
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|Interconnect Pitch (M1P) | |Interconnect Pitch (M1P) | ||
|SRAM bit cell | |SRAM bit cell |
Revision as of 05:05, 4 April 2017
Semiconductor lithography processes technology |
|
The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.
Industry
Fab |
---|
Process Name |
1st Production |
Voltage |
|
Gate Length |
Interconnect Pitch (M1P) |
SRAM bit cell |
Intel | NEC | Hitachi |
---|---|---|
Hi-CMOS III | ||
1987 | 1988 | |
5 V | ||
Value | Value | Value |
? µm | ? µm | 1.2 µm |
? µm | ? µm | 1.3 µm |
? µm² | ? µm² | ? µm² |
1.2 µm Microprocessors
This list is incomplete; you can help by expanding it.
References
- Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.