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Difference between revisions of "7 nm lithography process"
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| − | | ? nm || ?x || 48 nm<ref> | + | | ? nm || ?x || 48 nm<ref>Samsung, [[IEEE]] [[International Electron Devices Meeting]] (IEDM) 2016</ref> || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x |
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| − | | ? nm || ?x || 36 nm<ref> | + | | ? nm || ?x || 36 nm<ref>Samsung, [[IEEE]] [[International Electron Devices Meeting]] (IEDM) 2016</ref> || ?x || ? nm || ?x || ? nm || ?x || ? nm || ?x |
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| − | | ? µm² || ?x || ? µm² || ?x || 0.027 µm²<ref> | + | | ? µm² || ?x || ? µm² || ?x || 0.027 µm²<ref>TSMC, [[IEEE]] [[International Electron Devices Meeting]] (IEDM) 2016</ref> || ?x || ? µm² || ?x || ? µm² || ?x |
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Revision as of 11:23, 24 December 2016
Semiconductor lithography processes technology
The 7 nanometer (7 nm) lithography process is a full node semiconductor manufacturing process following the 10 nm process node. The term "7 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. Commercial mass production of integrated circuit using 7 nm process is set to begin sometimes in 2019 or 2020. This technology will be replaced by 5 nm process around 2022.
Industry
 |
Preliminary Data! Information presented in this article deal with future products, data, features, and specifications that have yet to be finalized, announced, or released. Information may be incomplete and can change by final release. |
| Fab |
|---|
| Process Name |
| 1st Production |
| |
| Fin Pitch |
| Fin Width |
| Fin Height |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell (HP) |
| SRAM bit cell (HD) |
| Intel | Samsung | TSMC | GlobalFoundries | IBM | |||||
|---|---|---|---|---|---|---|---|---|---|
| P1276 | |||||||||
| Value | 10 nm Δ | Value | 10 nm Δ | Value | 10 nm Δ | Value | 10 nm Δ | Value | 10 nm Δ |
| ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| ? nm | ?x | 48 nm[1] | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| ? nm | ?x | 36 nm[2] | ?x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| ? µm² | ?x | ? µm² | ?x | ? µm² | ?x | ? µm² | ?x | ? µm² | ?x |
| ? µm² | ?x | ? µm² | ?x | 0.027 µm²[3] | ?x | ? µm² | ?x | ? µm² | ?x |
7 nm Microprocessors
This list is incomplete; you can help by expanding it.
7 nm Microarchitectures
This list is incomplete; you can help by expanding it.
References
- ↑ Samsung, IEEE International Electron Devices Meeting (IEDM) 2016
- ↑ Samsung, IEEE International Electron Devices Meeting (IEDM) 2016
- ↑ TSMC, IEEE International Electron Devices Meeting (IEDM) 2016