Semiconductor & Computer Engineering
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Difference between revisions of "180 nm lithography process"
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| colspan="2" | 1999 || colspan="2" | 2000 || colspan="2" | 2000 || colspan="2" | 2000 | | colspan="2" | 1999 || colspan="2" | 2000 || colspan="2" | 2000 || colspan="2" | 2000 | ||
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| − | ! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[ | + | ! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[250 nm]] Δ !! Value !! [[220 nm]] Δ |
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| 480 nm || 0.96x || ? nm || ?x || ? nm || ?x || ? nm || ?x | | 480 nm || 0.96x || ? nm || ?x || ? nm || ?x || ? nm || ?x | ||
Revision as of 00:22, 27 April 2016
Semiconductor lithography processes technology
The 180 nm lithography process is a full node semiconductor manufacturing process following the 220 nm process stopgap. Commercial integrated circuit manufacturing using 180 nm process began in late 1998. This technology was replaced by with 150 nm process (HN) in 2000 and 130 nm process (FN) in 2001.
Industry
The 180 nm process was first to use Cu metalization as a replacement for Al for interconnects.
Industry
Fujitsu's 0.18 micron process (CS-80) is 6-layer FSG based.
| Fab |
|---|
| Process Name |
| 1st Production |
| |
| Contacted Gate Pitch |
| Interconnect Pitch (M1P) |
| SRAM bit cell |
| Intel | Fujitsu | TSMC | Motorola | ||||
|---|---|---|---|---|---|---|---|
| P858 | CS-80 | HiPerMOS 6 | |||||
| 1999 | 2000 | 2000 | 2000 | ||||
| Value | 250 nm Δ | Value | 250 nm Δ | Value | 250 nm Δ | Value | 220 nm Δ |
| 480 nm | 0.96x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| 500 nm | 0.82x | ? nm | ?x | ? nm | ?x | ? nm | ?x |
| 5.59 µm2 | 0.54x | 4.18 µm2 | ?x | 4.65 | 0.62x | ? µm2 | ?x |
180 nm Microprocessors
- Intel
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180 nm Microarchitectures
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