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Difference between revisions of "65 nm lithography process"

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{{lithography processes}}
 
{{lithography processes}}
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The '''65 nanometer (65 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 65 nm process began in 2005. This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in 2007.
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The '''65 nanometer ([[65 nm]]) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[80 nm lithography process|80 nm process]] stopgap.  
 +
:Commercial [[integrated circuit]] manufacturing using 65 nm process began in [[2005]].  
 +
This technology was superseded by the [[55 nm lithography process|55 nm process]] (HN) / [[45 nm lithography process|45 nm process]] (FN) in [[2007]].
  
 
== Industry ==
 
== Industry ==
−
{{scrolling table/top|style=text-align: right; | first=Fab
+
[[File:45nm SRAM photo.JPG|left|400px]]
−
  |Process Name
+
 
 +
=== Design Rules ===
 +
{| class="wikitable"
 +
|-
 +
! colspan="4" | [[Intel]] [[65 nm]] Design Rules
 +
|-
 +
! Layer !! Pitch !! Thick !! Aspect <br>Ratio
 +
|-
 +
| Isolation || 220 nm || 320 nm || -
 +
|-
 +
| Polysilicon || 220 nm || 90 nm || -
 +
|-
 +
| Contacted <br>Gate ||  220 nm ||  || -
 +
|-
 +
| Metal 1 || 210 nm || 170 nm || 1.6
 +
|-
 +
| Metal 2 || 210 nm || 190 nm || 1.8
 +
|-
 +
| Metal 3 || 220 nm || 200 nm || 1.8
 +
|-
 +
| Metal 4 || 280 nm || 250 nm || 1.8
 +
|-
 +
| Metal 5 || 330 nm || 300 nm || 1.8
 +
|-
 +
| Metal 6 || 480 nm || 430 nm || 1.8
 +
|-
 +
| Metal 7 || 720 nm || 650 nm || 1.8
 +
|-
 +
| Metal 8 || 1.80 µm || 975 nm || 1.8
 +
|}
 +
{{clear}}
 +
=== Specifications ===
 +
{{scrolling table/top|style=text-align: right; | first=Fab /<br>Manuf
 +
  |Process <br>Name
 
  |1st Production
 
  |1st Production
 
  |Wafer
 
  |Wafer
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{{scrolling table/mid}}
 
{{scrolling table/mid}}
 
|-
 
|-
−
! colspan="2" | [[Intel]] !! colspan="2" | [[IBM]] / [[Toshiba]] / [[Sony]] / [[AMD]] !! colspan="2" | [[TI]] !! colspan="2" | [[IBM]] / [[Chartered]] / [[Infineon]] / [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]]
+
! colspan="2" | [[Intel]] !! colspan="2" | [[IBM]] / [[Toshiba]] <br>/ [[Sony]] / [[AMD]] !! colspan="2" | [[TI]] !! colspan="2" | [[IBM]] / [[Chartered]] / <br>[[Infineon]] / [[Samsung]] !! colspan="2" | [[TSMC]] !! colspan="2" | [[Fujitsu]]
 
|- style="text-align: center;"
 
|- style="text-align: center;"
−
| colspan="2" | P1264 || colspan="2" |  || colspan="2" |  || colspan="2" |  || colspan="2" |  || colspan="2" | CS-200/CS-201/CS-250
+
| colspan="2" | P1264 || colspan="2" |  || colspan="2" |  || colspan="2" |  || colspan="2" |  || colspan="2" | CS-200 / CS-201<br>/ CS-250
 
|- style="text-align: center;"
 
|- style="text-align: center;"
 
| colspan="2" | 2005 || colspan="2" | 2005 || colspan="2" | 2007 || colspan="2" | 2005 || colspan="2" | 2005 || colspan="2" | 2006
 
| colspan="2" | 2005 || colspan="2" | 2005 || colspan="2" | 2007 || colspan="2" | 2005 || colspan="2" | 2005 || colspan="2" | 2006
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| || || 0.127 µm² || 0.67x || || || 0.189 µm² || 0.69x || || || ||  
 
| || || 0.127 µm² || 0.67x || || || 0.189 µm² || 0.69x || || || ||  
 
{{scrolling table/end}}
 
{{scrolling table/end}}
−
=== Design Rules ===
 
−
{| class="wikitable collapsible collapsed"
 
−
|-
 
−
! colspan="4" | Intel 65nm Design Rules
 
−
|-
 
−
! Layer !! Pitch !! Thick !! Aspect Ratio
 
−
|-
 
−
| Isolation || 220 nm || 320 nm || -
 
−
|-
 
−
| Polysilicon || 220 nm || 90 nm || -
 
−
|-
 
−
| Contacted Gate ||  220 nm ||  || -
 
−
|-
 
−
| Metal 1 || 210 nm || 170 nm || 1.6
 
−
|-
 
−
| Metal 2 || 210 nm || 190 nm || 1.8
 
−
|-
 
−
| Metal 3 || 220 nm || 200 nm || 1.8
 
−
|-
 
−
| Metal 4 || 280 nm || 250 nm || 1.8
 
−
|-
 
−
| Metal 5 || 330 nm || 300 nm || 1.8
 
−
|-
 
−
| Metal 6 || 480 nm || 430 nm || 1.8
 
−
|-
 
−
| Metal 7 || 720 nm || 650 nm || 1.8
 
−
|-
 
−
| Metal 8 || 1.80 µm || 975 nm || 1.8
 
−
|}
 
  
 
== 65 nm Microprocessors==
 
== 65 nm Microprocessors==
−
* AMD
+
* [[AMD]]
 
** {{amd|Athlon 64 X2}}
 
** {{amd|Athlon 64 X2}}
 
** {{amd|Athlon X2}}
 
** {{amd|Athlon X2}}
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** {{amd|Phenom}}
 
** {{amd|Phenom}}
 
** {{amd|Turion 64 X2}}
 
** {{amd|Turion 64 X2}}
−
* Fujitsu
+
* [[Fujitsu]]
 
** {{fujitsu|SPARC64 VII}}
 
** {{fujitsu|SPARC64 VII}}
−
* IBM
+
* [[IBM]]
 
** {{ibm|Power6}}
 
** {{ibm|Power6}}
−
* Intel
+
* [[Intel]]
 
** {{intel|Celeron}}
 
** {{intel|Celeron}}
 
** {{intel|Core 2 Duo}}
 
** {{intel|Core 2 Duo}}
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* Loongson
 
* Loongson
 
** {{loongson|Godson 2}}
 
** {{loongson|Godson 2}}
−
* Qualcomm
+
* [[Qualcomm]]
 
** {{qualcomm|MSM6xxx}}
 
** {{qualcomm|MSM6xxx}}
 
* Sun
 
* Sun
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== 65 nm Microarchitectures ==
 
== 65 nm Microarchitectures ==
−
* AMD
+
* [[AMD]]
 
** {{amd|K8|l=arch}}
 
** {{amd|K8|l=arch}}
 
** {{amd|K10|l=arch}}
 
** {{amd|K10|l=arch}}
−
* ARM
+
* [[ARM]]
 
** {{armh|ARM7|l=arch}}
 
** {{armh|ARM7|l=arch}}
−
* IBM
+
* [[IBM]]
 
** {{ibm|z10|l=arch}}
 
** {{ibm|z10|l=arch}}
−
* Intel
+
* [[Intel]]
−
** {{intel|Core|l=arch}}
+
** '''{{intel|Core|l=arch}}'''
 
* Movidius
 
* Movidius
 
** {{movidius|SHAVE v2.0|l=arch}}
 
** {{movidius|SHAVE v2.0|l=arch}}
 
* VIA Technologies
 
* VIA Technologies
 
** {{via|Isaiah|l=arch}}
 
** {{via|Isaiah|l=arch}}
 +
 
{{expand list}}
 
{{expand list}}
  

Latest revision as of 21:07, 19 March 2025

basic wafer drawing.svg Semiconductor lithography processes technology
v · d · e

The 65 nanometer (65 nm) lithography process is a full node semiconductor manufacturing process following the 80 nm process stopgap.

Commercial integrated circuit manufacturing using 65 nm process began in 2005.

This technology was superseded by the 55 nm process (HN) / 45 nm process (FN) in 2007.

Industry[edit]

45nm SRAM photo.JPG

Design Rules[edit]

Intel 65 nm Design Rules
Layer Pitch Thick Aspect
Ratio
Isolation 220 nm 320 nm -
Polysilicon 220 nm 90 nm -
Contacted
Gate 		220 nm -
Metal 1 210 nm 170 nm 1.6
Metal 2 210 nm 190 nm 1.8
Metal 3 220 nm 200 nm 1.8
Metal 4 280 nm 250 nm 1.8
Metal 5 330 nm 300 nm 1.8
Metal 6 480 nm 430 nm 1.8
Metal 7 720 nm 650 nm 1.8
Metal 8 1.80 µm 975 nm 1.8

Specifications[edit]

Fab /
Manuf
Process
Name​
1st Production​
Wafer​
Metal Layers​
 ​
Contacted Gate Pitch​
Interconnect Pitch (M1P)​
SRAM bit cell (HD)​
SRAM bit cell (LP)​
DRAM bit cell
Intel IBM / Toshiba
/ Sony / AMD 		TI IBM / Chartered /
Infineon / Samsung 		TSMC Fujitsu
P1264 CS-200 / CS-201
/ CS-250
2005 2005 2007 2005 2005 2006
300mm
8 10 11 10 11
Value 90 nm Δ Value 90 nm Δ Value 90 nm Δ Value 90 nm Δ Value 90 nm Δ Value 90 nm Δ
220 nm 0.85x 250 nm  ?x  ? nm  ?x 200 nm 0.82x 160 nm 0.67x  ? nm  ?x
210 nm 0.95x  ? nm  ?x  ? nm  ?x 180 nm 0.73 180 nm 0.75x  ? nm  ?x
0.570 µm² 0.57x 0.540 µm² 0.49 µm² 0.540 µm² 0.55x 0.499 µm² 0.50x
0.680 µm² 0.65 µm² 0.65x 0.49 µm² 0.676 µm² 0.54x 0.525 µm² 0.53x  ? µm²  ?x
0.127 µm² 0.67x 0.189 µm² 0.69x

65 nm Microprocessors[edit]

This list is incomplete; you can help by expanding it.

65 nm Microarchitectures[edit]

This list is incomplete; you can help by expanding it.

Documents[edit]

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