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Difference between revisions of "1.3 µm lithography process"

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The '''1.2 µm lithography process''' was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by [[1 µm]], [[800 nm]], and [[650 nm]] processes.
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The '''1.3 µm lithography process''' was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out in the early 1990s and was replaced by [[1 µm]], [[800 nm]], and [[650 nm]] processes.
  
 
== Industry ==
 
== Industry ==

Revision as of 13:23, 10 January 2019

basic wafer drawing.svg Semiconductor lithography processes technology
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The 1.3 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1.3 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Motorola Hitachi Fujitsu
Hi-CMOS III  
1987 1987
5 V
Value Value 2 µm Δ Value
 ? nm 1.2 µm 0.60x  ? nm
 ? nm 1.3 µm 0.43x nm
 ? µm²  ? µm²  ? µm²

1.3 µm Microprocessors

This list is incomplete; you can help by expanding it.

References

  • Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.
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