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Difference between revisions of "1.2 µm lithography process"

(Industry)
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  |Voltage
 
  |Voltage
 
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  |Contacted Gate Pitch
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  |Gate Length
 
  |Interconnect Pitch (M1P)
 
  |Interconnect Pitch (M1P)
 
  |SRAM bit cell
 
  |SRAM bit cell

Revision as of 05:05, 4 April 2017

The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.

Industry

Fab
Process Name​
1st Production​
Voltage​
 ​
Gate Length​
Interconnect Pitch (M1P)​
SRAM bit cell
Intel NEC Hitachi
  Hi-CMOS III
1987 1988
5 V
Value Value Value
 ? µm  ? µm 1.2 µm
 ? µm  ? µm 1.3 µm
 ? µm²  ? µm²  ? µm²

1.2 µm Microprocessors

This list is incomplete; you can help by expanding it.

References

  • Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.