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Difference between revisions of "1.2 µm lithography process"
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|Process Name | |Process Name | ||
|1st Production | |1st Production | ||
+ | |Voltage | ||
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|Contacted Gate Pitch | |Contacted Gate Pitch | ||
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{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
− | ! [[Intel]] !! [[NEC]] | + | ! [[Intel]] !! [[NEC]] !! [[Hitachi]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | || | + | | || || Hi-CMOS III |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | 1987 || 1988 | + | | 1987 || 1988 || |
+ | |- style="text-align: center;" | ||
+ | | || || 5 V | ||
|- | |- | ||
− | ! Value !! Value | + | ! Value !! Value !! Value |
|- | |- | ||
− | | ? | + | | ? µm || ? µm || 1.2 µm |
|- | |- | ||
− | | ? | + | | ? µm || ? µm || 1.3 µm |
|- | |- | ||
− | | ? µm² || ? µm² | + | | ? µm² || ? µm² || ? µm² |
{{scrolling table/end}} | {{scrolling table/end}} | ||
Revision as of 04:59, 4 April 2017
The 1.2 µm lithography process was the semiconductor process technology used by the major semiconductor companies between in the late 1980s. 1 µm was phased out in the early 1990s and was replaced by 1 µm, 800 nm, and 650 nm processes.
Industry
Fab |
---|
Process Name |
1st Production |
Voltage |
|
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
SRAM bit cell |
Intel | NEC | Hitachi |
---|---|---|
Hi-CMOS III | ||
1987 | 1988 | |
5 V | ||
Value | Value | Value |
? µm | ? µm | 1.2 µm |
? µm | ? µm | 1.3 µm |
? µm² | ? µm² | ? µm² |
1.2 µm Microprocessors
This list is incomplete; you can help by expanding it.
References
- Meguro, S., et al. "Hi-CMOS III technology." Electron Devices Meeting, 1984 International. IEEE, 1984.