From WikiChip
Difference between revisions of "280 nm lithography process"
(→Industry) |
|||
Line 13: | Line 13: | ||
{{scrolling table/mid}} | {{scrolling table/mid}} | ||
|- | |- | ||
− | ! [[Motorola]] | + | ! [[Intel]] || [[Motorola]] |
|- style="text-align: center;" | |- style="text-align: center;" | ||
− | | HiPerMOS 3 | + | | || HiPerMOS 3 |
|- | |- | ||
− | | 1997 | + | | 1996 || 1997 |
|- | |- | ||
− | | ? nm | + | | ? nm || ? nm |
|- | |- | ||
− | | ? nm | + | | ? nm || ? nm |
|- | |- | ||
− | | ? | + | | ? || ? |
|- | |- | ||
− | | ? | + | | ? µm² || ? µm² |
{{scrolling table/end}} | {{scrolling table/end}} | ||
Revision as of 18:55, 30 March 2017
The 280 nanometer (280 nm) lithography process is was semiconductor manufacturing process following the 350 nm process. Commercial integrated circuit manufacturing using 280 nm process began in late 1990s. 280 nm and was phased out and later replaced by 250 nm, 220 nm, and 180 nm processes.
Industry
Fab |
---|
Process Name |
1st Production |
Contacted Gate Pitch |
Interconnect Pitch (M1P) |
Metal Layers |
SRAM bit cell |
280 nm Microprocessors
This list is incomplete; you can help by expanding it.
280 nm Microarchitectures
This list is incomplete; you can help by expanding it.