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    Difference between revisions of "16 nm lithography process"    
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| − | The '''16 nm lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in 2017. | + | The '''16 nanometer (16 nm) lithography process''' is a [[technology node|full node]] semiconductor manufacturing process following the [[20 nm lithography process|20 nm process]] stopgap. Commercial [[integrated circuit]] manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with [[10 nm lithography process|10 nm process]] in 2017. | 
| == Industry == | == Industry == | ||
Revision as of 04:56, 24 May 2016
The 16 nanometer (16 nm) lithography process is a full node semiconductor manufacturing process following the 20 nm process stopgap. Commercial integrated circuit manufacturing using 16 nm process began in 2014. The term "16 nm" is simply a commercial name for a generation of a certain size and its technology, as opposed to gate length or half pitch. This technology is set to be replaced with 10 nm process in 2017.
Industry
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| Fin Pitch | 
| Fin Width | 
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| Contacted Gate Pitch | 
| Interconnect Pitch (M1P) | 
| SRAM bit cell | 
16 nm Microprocessors
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16 nm System on Chips
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16 nm Microarchitectures
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 Semiconductor lithography processes technology
 Semiconductor lithography processes technology